Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Jesus Alfonso Caraveo-Frescas, Yasser Khan, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.
Original languageEnglish (US)
JournalScientific Reports
Volume4
Issue number1
DOIs
StatePublished - Jun 10 2014

ASJC Scopus subject areas

  • General

Fingerprint

Dive into the research topics of 'Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility'. Together they form a unique fingerprint.

Cite this