Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

Yuan Yuan Zhang*, Yumeng Shi, Fuming Chen, S. G. Mhaisalkar, Lain-Jong Li, Beng S. Ong, Yiliang Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

Original languageEnglish (US)
Article number223512
JournalApplied Physics Letters
Volume91
Issue number22
DOIs
StatePublished - Dec 6 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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