Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes

Nelson Tansu*, Hongping Zhao, Ronald A. Arif, Yik Khoon Ee, Guangyu Liu, Xiaohang Li, G. S. Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Novel InGaN-based active regions with momentum matrix element were investigated achieving improved gain and radiative recombination . Staggered InGaN quantum wells (QWs) and type-II GaNAs QWs demonstrated improvement in recombination rate and optical gain for green regime, and these active regions have the to be implemented for high-efficiency green light emitting diodes and lasers.

Original languageEnglish (US)
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: Dec 8 2008Dec 11 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period12/8/0812/11/08

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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