Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

S. L. Ng*, H. S. Lim, Y. L. Lam, Y. C. Chan, Boon Ooi, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.

Original languageEnglish (US)
Pages (from-to)241-242
Number of pages2
JournalElectronics Letters
Volume38
Issue number5
DOIs
StatePublished - Feb 28 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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