Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

S. L. Ng*, H. S. Djie, H. S. Lim, Boon Ooi, Y. L. Lam, Y. C. Chan, P. Dowd, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A lattice matched multiple quantum well (MQW) structure was used to fabricate 10-channel electro-absorption (EA) modulator arrays. The method was based on using gray mask lithography and a low-energy arsenic ion-implantation induced disordering (IIID). The EA modulators were characterized through photocurrent measurements using end-fire-coupling technique. The polarization sensitivity of the devices was determined using the degree of intermixing on the group V sublattices.

Original languageEnglish (US)
Pages (from-to)40-41
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 2001
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: Nov 11 2001Nov 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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