Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

H. Wenisch*, K. Ohkawa, A. Isemann, M. Fehrer, D. Hommel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm2 and the operating voltage is ∼14V. The lifetime in pulsed operation exceeds 1 h.

Original languageEnglish (US)
Pages (from-to)891-893
Number of pages3
JournalElectronics Letters
Volume34
Issue number9
StatePublished - Apr 30 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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