Physical characterization challenges in 45 nm technology node

K. Li*, P. Liu, Q. Wang, I. Tee, J. Teong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.

Original languageEnglish (US)
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: Jul 7 2008Jul 11 2008

Other

Other2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
CountrySingapore
CitySingapore
Period07/7/0807/11/08

ASJC Scopus subject areas

  • Engineering(all)

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