Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane

Chiu Chih Chiang*, Mao Chieh Chen, Lain Jong Li, Zhen Cheng Wu, Syun Ming Jang, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (α-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and helium (He) carrier gas with and without oxygen (O2) reaction gas. The α-SiCO dielectric barrier film deposited by PECVD without O 2 reaction gas exhibits a low k-value of 2.8, thermally stable at temperatures up to 550°C, excellent moisture resistance, and superb Cu barrier property until 400°C. With the addition of O2 reaction gas during the dielectric deposition process, the dielectric constant of the α-SiCO dielectric barrier films increases with increasing flow rate of O2 reaction gas. Increasing flow rate of O2 reaction gas during the deposition of the α-SiCO dielectric barrier films also degrades the thermal stability and moisture resistance of the dielectric barrier films. Moreover, the addition of O2 reaction gas also results in a degraded Cu barrier property of dielectric films.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume151
Issue number9
DOIs
StatePublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

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