Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures

C. Y. Ngo*, S. F. Yoon, W. K. Loke, Tien Khee Ng, S. J. Chua

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this work, preliminary photovoltaic results of the 10-layer InAs/InGaAs/GaAs quantum dot (QD) heterostructures were presented. As demonstrated, enhancement in the sub-GaAs bandgap spectral response was observed, especially at the 1.0-1.2 eV energy range. This implies that the incorporation of InAs QDs in existing InGaP/GaAs/Ge multijunction solar cells is beneficial for increasing the spectral utilization between Ge (0.67 eV) and GaAs bandgaps (1.42 eV). The open-circuit voltage (VOC) and fill factor (FF) of the device are 0.4 V and 0.51, respectively. The obtained values are smaller than that reported by GaAs solar cells (VOC=1.04 eV and FF=0.85), and the degradation is believed to be due to the accumulated strain from the 10-layer QDs. We believe that, upon optimization, incorporation of the InAs/InGaAs/GaAs QDs into existing InGaP/GaAs/Ge solar cells will result in solar cells with higher efficiency and render solar energy more cost competitive.

Original languageEnglish (US)
Pages (from-to)1885-1888
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
StatePublished - Mar 15 2009

Keywords

  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • B1. Arsenates
  • B1. Nanomaterials
  • B2. Semiconducting III-V materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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