Photoresponse induced by Ge nanodots on SiO2/Si substrate

Paola Castrucci*, Silvano Del Gobbo, Eugen Speiser, Manuela Scarselli, Maurizio De Crescenzi, Guillaume Amiard, Antoine Ronda, Isabelle Berbezier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.

Original languageEnglish (US)
Pages (from-to)1940-1942
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume356
Issue number37-40
DOIs
StatePublished - Aug 15 2010

Keywords

  • 73.63.Bd
  • 78.56.-a

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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