This work present an approach on fabricating advanced single crystal semiconducting hetero-structures optoelectronics devices. It demonstrates a new way of stacking the n-type MoS2 single crystal with p-type perovskite CH3NH3PbBr3 single crystal in the vertical direction enables us to p-n diode. Shows good current-voltage rectifying behavior in dark and light condition. Successful fabrication of single crystal CH3NH3PbBr3/MoS2. Optoelectronics devices is a step ahead in using single crystal hetero-structures devices.
|Original language||English (US)|
|Title of host publication||2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|State||Published - Jul 2018|