Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

H. S. Lim*, B. S. Ooi, Y. L. Lam, Y. C. Chan, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, quantum well laser material with a control on the amount of intermixing was blueshifted by varying the dose of As implantation at 200°C. A wide range of differential bandgap shifts going up to 60meV were obtained.

Original languageEnglish (US)
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
PublisherIEEE
Pages1030-1031
Number of pages2
Volume3
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) - Seoul, South Korea
Duration: Aug 30 1999Sep 3 1999

Other

OtherProceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99)
CitySeoul, South Korea
Period08/30/9909/3/99

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing'. Together they form a unique fingerprint.

Cite this