Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix

Y. P. Guo*, J. C. Zheng, A. T.S. Wee, C. H.A. Huan, Kun Li, J. S. Pan, Z. C. Feng, S. J. Chua

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

The dependence of the photoluminescence (PL) from SiC nanocrystals embedded in a SiO2 matrix on annealing is presented. Blue-green PL has been observed at room temperature from annealed SiC-SiO2 composite films. The intensity of the single emission band at 460 nm (2.7 eV) shows a strong dependence on the annealing temperature. The combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanocrystals have been incorporated into the SiO2 matrix and O-deficient defects were formed. The origin of luminescence is attributed to the creation of defects in silicon oxide.

Original languageEnglish (US)
Pages (from-to)319-322
Number of pages4
JournalChemical Physics Letters
Volume339
Issue number5-6
DOIs
StatePublished - May 18 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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