The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy EA=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 2003|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering