Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

T. K. Ng, S. F. Yoon*, W. J. Fan, W. K. Loke, S. Z. Wang, S. T. Ng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy EA=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.

Original languageEnglish (US)
Pages (from-to)2324-2328
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
StatePublished - Nov 2003
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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