Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, Hongping Zhao, G. S. Huang, Nelson Tansu, Jacob B. Khurgin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2010
StatePublished - Dec 1 2010
EventQuantum Electronics and Laser Science Conference, QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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