Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

T. Mitsuyu*, K. Ohkawa, O. Yamazaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.

Original languageEnglish (US)
Pages (from-to)1348-1350
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number20
DOIs
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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