Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

Guan Sun*, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, Jacob B. Khurgin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified due to recombination of electrons in the AlN coupling barrier with heavy holes in the GaN quantum wells. Photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells, is observed.

Original languageEnglish (US)
Article number021904
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
StatePublished - Jul 12 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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