Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, Jacob B. Khurgin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - Dec 1 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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