Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

Tien Khee Ng*, S. F. Yoon, S. Z. Wang, W. K. Loke, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

The photoluminescence characteristics of GaInNAs quantum wells (QWs) after high temperature annealing were discussed. The QWs were grown using radio-freqency nitorgen plasma source. It was found that annealing at 840°C for 10 min improved the GaInNAs QW quality. The results were supported by evidence from PL and XRD measurements. It was suggested that residual strain-induced GaAs/GaInAs/GaAs interface diffusion and defect-assisted diffusion are the mechanisms responsible for blueshift of photoluminescence peak wavelength in GaInAs QWs.

Original languageEnglish (US)
Pages (from-to)964-968
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 1 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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