Photoelectrochemical reactions and hydrogen evolution of III-nitride semiconductors

K. Fujii*, T. Yao, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoelectrochemical properties of visible light absorption, hydrogen evolution at zero bias, and stability of working electrode for III-nitrides were demonstrated. Photoassist hydrogen evolution from Pt counterelectrode was observed using n-type InxGa1-xN with 408 nm band-edge emission at room temperature. Hydrogen evolution was achieved without bias using crystallographic and electric optimized n-type GaN. Over 5 h operation of the photoelectrochemical reaction using n-type GaN was revealed. Details of these properties are discussed.

Original languageEnglish (US)
Title of host publicationWater Dynamics - 5th International Workshop on Water Dynamics
Pages3-8
Number of pages6
DOIs
StatePublished - Mar 17 2008
Event5th International Workshop on Water Dynamics - Sendai, Japan
Duration: Sep 25 2007Sep 27 2007

Publication series

NameAIP Conference Proceedings
Volume987
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other5th International Workshop on Water Dynamics
CountryJapan
CitySendai
Period09/25/0709/27/07

Keywords

  • GaN
  • Hydrogen evolution
  • III-nitrides
  • Photoelectrolysis

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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