Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n -type GaN

Masato Ono*, Katsushi Fujii, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Takafumi Yao, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

The authors studied the photoelectrochemical properties dependent on carrier concentration of n -type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7× 1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

Original languageEnglish (US)
Article number054708
JournalJournal of Chemical Physics
Volume126
Issue number5
DOIs
StatePublished - Feb 19 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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