Photoelectrochemical properties of nonpolar and semipolar GaN

Katsushi Fujii*, Yasuhiro Iwaki, Hisashi Masui, Troy J. Baker, Michael Iza, Hitoshi Sato, John Kaeding, Takafumi Yao, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

The photoelectrochemical and electrical properties of nonpolar (112̄0)-oriented and semipolar (112̄2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (112̄0) < (0001) < (112̄2). The highest photocurrent at a zero bias had been expected for the (112̄0) sample considering the flatband potential, but the photocurrent of the (112̄0) sample was the lowest among the three. This could have been due to the electric properties of the (112̄0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

Original languageEnglish (US)
Pages (from-to)6573-6578
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number10 A
DOIs
StatePublished - Oct 9 2007

Keywords

  • Carrier transport
  • Gallium nitride
  • Nonpolar
  • Photoelectrochemistry
  • Semiconductor-electrolyte contacts
  • Semipolar

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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