Photoelectrochemical properties of InGaN for H2 generation from aqueous water

Katsushi Fujii*, Kazuhide Kusakabe, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In 0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.

Original languageEnglish (US)
Pages (from-to)7433-7435
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
StatePublished - Oct 11 2005
Externally publishedYes

Keywords

  • Indium gallium nitride
  • Photoelectrochemical cells
  • Photoelectrolysis
  • Semiconductor-electrolyte contacts
  • Water splitting

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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