Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

David Hwang, Benjamin P. Yonkee, Burhan Saif Addin, Robert M. Farrell, Shuji Nakamura, James S. Speck, Steven DenBaars

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).
Original languageEnglish (US)
Pages (from-to)22875
JournalOptics Express
Volume24
Issue number20
DOIs
StatePublished - Sep 23 2016
Externally publishedYes

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