Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN

Katsushi Fujii*, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.

Original languageEnglish (US)
Title of host publicationECS Transactions - Fundamentals of Energy Storage and Conversion
Pages177-183
Number of pages7
Volume13
Edition17
DOIs
StatePublished - 2008
Externally publishedYes
EventFundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society - Phoenix, AZ, United States
Duration: May 18 2008May 23 2008

Other

OtherFundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society
CountryUnited States
CityPhoenix, AZ
Period05/18/0805/23/08

ASJC Scopus subject areas

  • Engineering(all)

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