Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin films with RuO2 electrodes

Husam Niman Alshareef*, K. R. Bellur, O. Auciello, A. I. Kingon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

The electrical properties and crystallization of Pb(Zr0.53Ti0.47)O3 (PZT) thin films grown on RuO2 electrodes by the sol-gel process have been studied. It was found that the amorphous as-deposited thin film first transforms to a pyrochlore phase at 500 °C. On further annealing, perovskite PZT begins to crystallize at about 600 °C. TEM anlysis reveals that a pyrochlore-type second phase still exists in the films even after annealing to temperatures of 750 °C for 10 min. These PZT films are fatigue-free, but they show large property variation and high leakage currents (J = 10-3 A cm-2 at 1 V). An 800 °C annealing treatment, for 10 min in air of the RuO2 bottom electrode prior to film deposition enhanced perovskite PZT nucleation, thereby eliminating the pyrochlore-type second phase. In addition, the leakage currents of PZT films grown on annealed RuO2 electrodes are about two orders of magnitude lower than those of PZT films grown on unannealed RuO2. It is also observed that annealing the entire capacitor stack after the top electrode deposition improved capacitor properties.

Original languageEnglish (US)
Pages (from-to)73-79
Number of pages7
JournalThin Solid Films
Volume256
Issue number1-2
DOIs
StatePublished - Feb 1 1995

Keywords

  • Dielectrics
  • Electrical properties and measurements
  • Ruthenium
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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