Passivated contacts to laser doped p+ and n+ regions

Xinbo Yang*, James Bullock, Lujia Xu, Qunyu Bi, Sachin Surve, Marco Ernst, Klaus Weber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this work, tunnel SiO2/a-Si:H stacks are trialed as passivated contacts to laser doped p+ and n+ regions. The passivation performance and contact resistivity are investigated as a function of the tunnel SiO2 thickness and annealing condition. We find that the SiO2/a-Si:H stack provides excellent passivation to laser doped n+ regions, with corresponding low recombination current density (Jo) values. A lower level of surface passivation is achieved by the SiO2/a-Si:H stack on laser doped p+ regions. A post-deposition forming gas anneal (FGA) at 400 °C is found to improve the passivation performance to laser doped p+ regions and deteriorate the passivation to laser doped n+ regions. Acceptable contact resistivity (ρc) values have been obtained for both laser doped n+ and p+ regions after aluminum metallization and a post FGA to activate the alloying process between the a-Si:H and aluminum layer. In the final part of this work implementation of the passivated contacts to laser doped regions into a simplified interdigitated back-contact (IBC) solar cell fabrication process is proposed. Simulation result suggests that IBC device with an efficiency of up to 23% can be achieved using the obtained experimental results.

Original languageEnglish (US)
Pages (from-to)38-44
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume140
DOIs
StatePublished - 2015

Keywords

  • Interdigitated back-contact cell
  • Laser doping
  • Passivated contact
  • Tunnel oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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