Parametric study of InP backside processing using high density plasma etching

Y. W. Chen*, Boon Ooi, G. I. Ng, C. L. Tan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl2/Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl2 percentage in the Cl2/Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 μm deep tapered profile has been achieved using a approximately 4 μm/min process without intentionally heating up the electrode. The gradient of the via was about 77° and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.

Original languageEnglish (US)
Pages (from-to)186-189
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Dec 3 2000
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: May 14 2000May 18 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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