P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

Kazuhiro Ohkawa*, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×1015 cm-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.

Original languageEnglish (US)
Pages (from-to)439-442
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number1
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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