P-channel thin-film transistors based on spray-coated Cu2O films

Pichaya Pattanasattayavong, Stuart Thomas, George Adamopoulos, Martyn A. McLachlan, Thomas Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.

Original languageEnglish (US)
Article number163505
JournalApplied Physics Letters
Volume102
Issue number16
DOIs
StatePublished - Apr 22 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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