Oxygen transfer from metal gate to high-k gate dielectric stack: Interface structure & property changes

Jeong Hee Ha*, Husam Alshareef, Jim Chambers, Yun Sun, Piero Pianetta, Paul C. McIntyre, Luigi Colombo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Photoelectron spectroscopy and transmission electron microscopy provide clear experimental evidence to show that oxygen initially present in the W gate layer of a metal/high-k gate stack is transferred to the substrate and increases the interfacial oxide during post-deposition thermal processing, Oxide interface layer growth was reduced, but still occurred, if a TaN barrier layer was used to cap the W gate metal, thus minimizing atmospheric oxygen incorporation. Our results suggest that oxygen is incorporated into the W layer (perhaps at grain boundaries and interfaces) during or immediately after its deposition, thus providing a source for subsequent oxidation of the underlying layers. This effect, which may be exhibited by other high workfunction metals besides W, may be an important contributor to the Vfb instability observed in scaled PMOS devices based on the metal/high-k gate stacks.

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages213-218
Number of pages6
Volume11
Edition4
DOIs
StatePublished - 2007
Externally publishedYes
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/8/0710/10/07

ASJC Scopus subject areas

  • Engineering(all)

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