Oxygen defect processes in silicon and silicon germanium

A. Chroneos, E. N. Sgourou, C. A. Londos, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.
Original languageEnglish (US)
Pages (from-to)021306
JournalApplied Physics Reviews
Volume2
Issue number2
DOIs
StatePublished - Jun 18 2015

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