Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

Jing Jiang, Ben Zhang, Mufei Yu, Li Li, Mark Neisser, Jun Sung Chun, Emmanuel P. Giannelis, Christopher K. Ober

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.
Original languageEnglish (US)
Pages (from-to)515-518
Number of pages4
JournalJournal of Photopolymer Science and Technology
Volume28
Issue number4
DOIs
StatePublished - 2015
Externally publishedYes

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