Out-of-plane strain effect on silicon-based flexible FinFETs

Mohamed T. Ghoneim, Nasir Alfaraj, Galo T. Sevilla, Hossain M. Fahad, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Original languageEnglish (US)
Title of host publication2015 73rd Annual Device Research Conference (DRC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages95-96
Number of pages2
ISBN (Print)9781467381345
DOIs
StatePublished - Aug 12 2015

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