Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
|Original language||English (US)|
|Title of host publication||2015 73rd Annual Device Research Conference (DRC)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|State||Published - Aug 12 2015|