Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

H. G. Ong, J. W. Cheah, X. Zou, B. Li, X. H. Cao, H. Tantang, Lain-Jong Li, H. Zhang*, G. C. Han, J. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.

Original languageEnglish (US)
Article number285301
JournalJournal of Physics D: Applied Physics
Volume44
Issue number28
DOIs
StatePublished - Jul 20 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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