Origin of competing blue and green emission in InGaN/GaN quantum-disks in nanowires heterostructure

Aditya Prabaswara, Tien Khee Ng, Dalaver Anjum, Nini Wei, Chao Zhao, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.

Original languageEnglish (US)
Title of host publication2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467393621
DOIs
StatePublished - Mar 22 2016
Event10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 - Anchorage, United States
Duration: Sep 12 2015Sep 16 2015

Other

Other10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
CountryUnited States
CityAnchorage
Period09/12/1509/16/15

Keywords

  • GaN
  • InGaN
  • molecular beam epitaxy
  • nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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