Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Alexios Papadimitratos, Aram Amassian, Aravind S. Killampalli, Jared L. MacK, George G. Malliaras, James R. Engstrom

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO2 and SiO2 modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO2. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains-independent of surface treatment-than films deposited using low-energy beams.

Original languageEnglish (US)
Pages (from-to)29-35
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume95
Issue number1
DOIs
StatePublished - Apr 1 2009

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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