Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser

S. M. Mitani, M. S. Alias, A. A. Manaf, F. M. Exhsan, A. F A Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈ 0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.

Original languageEnglish (US)
Title of host publication2010 International Conference on Photonics, ICP2010
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 1st International Conference on Photonics, ICP2010 - Langkawi, Kedah, Malaysia
Duration: Jul 5 2010Jul 7 2010

Other

Other2010 1st International Conference on Photonics, ICP2010
CountryMalaysia
CityLangkawi, Kedah
Period07/5/1007/7/10

Keywords

  • GaInNAs
  • Quantum-well devices
  • Surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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