Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

Mohammed Abdul Majid, M. Hugues, S. Vézian, D. T. D. Childs, R. A. Hogg

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
Original languageEnglish (US)
Pages (from-to)2066-2073
Number of pages8
JournalIEEE Photonics Journal
Volume4
Issue number6
DOIs
StatePublished - Dec 2012

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