Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

Jian Sun, Jürgen Kosel, Chinthaka Pasan Gooneratne, Yeongah Soh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.
Original languageEnglish (US)
Title of host publication2010 IEEE Sensors
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1329-1332
Number of pages4
ISBN (Print)9781424481682
DOIs
StatePublished - Nov 2010

Fingerprint Dive into the research topics of 'Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure'. Together they form a unique fingerprint.

Cite this