Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

Fei Xue, Xin He, Dharmaraj Periyanagounder, Zhigang Ji, Lain-Jong Li, Jr-Hau He, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
Original languageEnglish (US)
JournalAccepted by IEEE Transactions on Electron Devices
StatePublished - 2021

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