Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy

Mohd Sharizal Alias*, Mohd Fauzi Maulud, Soile Suomalainen, Mohd Razman Yahya, Abdul Fatah Awang Mat

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.

Original languageEnglish (US)
Pages (from-to)245-248
Number of pages4
JournalSains Malaysiana
Volume37
Issue number3
StatePublished - Sep 2008
Externally publishedYes

Keywords

  • InGaAs, semiconductor laser
  • Material gain
  • Quantum well

ASJC Scopus subject areas

  • General

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