Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Rami T. Elafandy, Tien Khee Ng, Yang Yang, Dong Kyu Cha, Bei Zhang, Lan Zhao, Meng Zhang, Pallab K. Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.
Original languageEnglish (US)
Title of host publication8th International Conference on High-capacity Optical Networks and Emerging Technologies
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages201-204
Number of pages4
ISBN (Print)9781457711695
DOIs
StatePublished - Dec 2011

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