The development of III-nitride deep-ultraviolet (DUV) (λ < 280 nm) lasers has attracted considerable interest for important applications such as non-line-of-sight communication and biochemical detection. Recently, tremendous efforts have been made to demonstrate edge-emitting III-nitride DUV lasers with low thresholds –. In comparison to the edge-emitting lasers, vertical-cavity surface-emitting lasers (VCSELs) possess advantageous characteristics including high-speed modulation, good beam quality, and control of production process. Despite decent progress of edge-emitting DUV lasers, little has been reported for the development of DUV VCSELs. Several additional breakthroughs are required to demonstrate DUV VCSELs. For example, VCSELs require distributed Bragg reflectors (DBRs) that are transparent to emitting photons with reflectivity values close to unity. But the reflectivity of current state-of-the-art III-nitride DUV DBRs is still limited to an insufficient level of ~80% . In addition, DUV surface stimulated emission (SE) from the III-nitride heterostructures needs to be demonstrated, which can be then matched to the resonant wavelength in the cavity provided by the high reflectivity DBRs. This has yet been reported prior to this study.