One-step rapid thermal process for bandgap tuned lasers in GaAs/AlGaAs structure

S. L. Ng*, Boon Ooi, Y. L. Lam, Y. C. Chan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A quantum well intermixing technique in GaAs/AlGaAs structure developed for band-gap tuned lasers was studied. The technique used a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process. The method being impurity-free, simpler and an one-step process enhancement and supression of QWI could be achieved.

Original languageEnglish (US)
StatePublished - Dec 1 2001
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: Jul 15 2001Jul 19 2001

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CountryJapan
CityChiba
Period07/15/0107/19/01

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'One-step rapid thermal process for bandgap tuned lasers in GaAs/AlGaAs structure'. Together they form a unique fingerprint.

Cite this