On the structure-property inter-relationships of metal gate electrodes for future generation CMOS

Prashant Majhi*, Husam Niman Alshareef, Huang Chun Wen, Kisik Choi, Patrick Lysaght, Craig Huffman, Hongfa Luan, Rusty Harris, Byoung Hun Lee, Chuck Ramiller

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

According to the ITRS (2004) high performance device trends will soon require high-k dielectrics with metal gate electrodes to remove poly depletion effects, achieve lower gate resistance, eliminate B penetration issues, and reduce interaction of the gate materials and the underlying high-k films. This study discusses the challenges and opportunities in identifying candidate material systems and associated processing techniques for future generation CMOS metal gates. The development of a standardized technique to accurately extract the work function of metal gates on hafnium based high-k dielectrics is forwarded. Additionally, a preliminary understanding of the structure-property inter-relationship of candidate metals is presented. The material systems include a) pure metals, b) metal nitrides, c) ternary metal nitrides, and d) alloys.

Original languageEnglish (US)
Title of host publicationProceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005
Pages56-61
Number of pages6
StatePublished - Dec 1 2005
Event4th International Conference on Semiconductor Technology, ISTC 2005 - Shanghai, China
Duration: Mar 15 2005Mar 17 2005

Publication series

NameProceedings - Electrochemical Society
VolumePV 2005-12

Other

Other4th International Conference on Semiconductor Technology, ISTC 2005
CountryChina
CityShanghai
Period03/15/0503/17/05

ASJC Scopus subject areas

  • Engineering(all)

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