On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

S. M. Mitani, P. K. Choudhury*, Mohd Sharizal Bin Alias

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.

Original languageEnglish (US)
Pages (from-to)373-378
Number of pages6
JournalOptik
Volume119
Issue number8
DOIs
StatePublished - Jun 16 2008

Keywords

  • AlGaAs structures
  • Quantum-well devices
  • VCSELs

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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