## Abstract

This paper is concerned with an analysis of the Euler-Poisson model for unipolar semiconductor devices in the steady state isentropic case. In the two-dimensional case we prove the existence of smooth solutions under a smallness assumption on the prescribed outflow velocity (small boundary current) and, additionally, under a smallness assumption on the gradient of the velocity relaxation time. The latter assumption allows a control of the vorticity of the flow and the former guarantees subsonic flow. The main ingredient of the proof is a regularization of the equation for the vorticity. Also, in the irrotational two- and three-dimensional cases we show that the smallness assumption on the outflow velocity can be replaced by a smallness assumption on the (physical) parameter multiplying the drift-term in the velocity equation. Moreover, we show that solutions of the Euler-Poisson system converge to a solution of the drift-diffusion model as this parameter tends to zero.

Original language | English (US) |
---|---|

Pages (from-to) | 389-407 |

Number of pages | 19 |

Journal | ZAMP Zeitschrift für angewandte Mathematik und Physik |

Volume | 42 |

Issue number | 3 |

DOIs | |

State | Published - May 1 1991 |

## ASJC Scopus subject areas

- Applied Mathematics
- Mathematics(all)