On oxygen deficiency and fast transient charge-trapping effects in high-κ dielectrics

Huang Chun Wen*, H. Rusty Harris, Chadwin D. Young, Hongfa Luan, Husam Niman Alshareef, Kisik Choi, Dim Lee Kwong, Prashant Majhi, Gennadi Bersuker, Byoung Hun Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

This letter correlates fast transient charging (FTC) in high-k gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-k film due to O scavenging process induced by the HfSix metal electrode. A hypothesis correlating O scavenging from the high-k dielectric to O vacancy formation, which contributes to FTC, is proposed.

Original languageEnglish (US)
Pages (from-to)984-987
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number12
DOIs
StatePublished - Dec 1 2006

Keywords

  • Charge trapping
  • High-κ
  • Metal gate
  • Mobility
  • O vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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