In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔGxx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.
ASJC Scopus subject areas
- Physics and Astronomy(all)